Nov 3, 2016 · 三相 GaN 逆变器具有 12V 到 60V 的宽输入电压范围以及 7Arms/10Apeak 输出电流,通过高达 100kHz PWM 的测试。 LMG5200 GaN 半桥功率级可简化 PCB 布局,并减少寄
With a traditional low-voltage 48-V Si-FET inverter, the switching losses at 40-kHz PWM may already be significantly higher than the conduction losses and hence dominate the overall power losses. A larger heat sink is required to dissipate the excess heat; however, this increases system cost, weight, and space.
Alternatively, the inverter losses increase with the switching frequency. With a traditional low-voltage 48-V Si-FET inverter, the switching losses at 40-kHz PWM may already be significantly higher than the conduction losses and hence dominate the overall power losses.
48-V, 10-A, High-Frequency PWM, 3-Phase GaN Inverter Reference Design for High-Speed Motor Drives 4.1.2 Power up and Power Down of 5-V and 3.3-V Rails The focus of this test was to validate the onboard 5-V and 3.3-V power supplies and measure the typical current consumption of the 3.3-V and 5-V rails.
The theoretical maximum efficiency at a 48-V, 400-W maximum input power with a phase-to-phase voltage of 34-VRMS(space vector PWM) at a 7-ARMSphase current would be 98.7% at a 40-kHz PWM and 98.5% at a 100-kHz PWM. 4.3.2 Thermal Analysis and SOA
To read more about this reference design, click here. Nidhi Agarwal is a Senior Technology Journalist at EFY with a deep interest in embedded systems, development boards and IoT cloud solutions. The 12V-60V three-phase GaN inverter design offers efficiency, precise current sensing, and sensorless control for robotics and motor drives.
2.1 Three-Phase GaN Inverter Power Stage The three-phase GaN inverter is realized with three LMG5200 GaN half-bridge power modules. A bulk capacitor of 220 uF is used to buffer the 48-V DC input. The PCB employs two separated ground planes: the power ground (PGND) and the logic or analog ground (GND).
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