9 hours ago · Welding Machine Inverters: A Deep Dive into IGBT Short-Circuit Protection and Durability In the world of power electronics, few applications are as demanding as the inverter
Jul 11, 2007 · In the second part of the paper, we present a novel feed-forward control of the IGBT over-voltage generated during a short circuit turn off. A possibility to control over voltage using
Aug 16, 2025 · To minimize turn-off switching loss (E off), a very fast current fall (high di/dt) is desirable. This is typically achieved by using a small gate resistor (R g (off)) to quickly
Mar 29, 2007 · Due to this gate-collector coupling, a high dV/dt transient created during IGBT turn-off can induce a parasitic turn-on effect that is potentially dangerous. This effect will lead
Nov 10, 2006 · In this paper, a simple model for the turn-off of high voltage IGBTs with long carrier lifetime is derived from the device physics. The turn-off stress for the IGBT and the influence of
Jan 19, 2020 · Comparable stray inductances within the power circuit of the snubberless operated IGBT-inverters, in combination with the considerable higher di/dt values at turn-off, can lead to
Taking AIKW40N65DH5 as an example, the maximum recommended negative shutdown voltage for IGBT is -20V, but in practice, the range of -12 to -5V is chosen. Negative turn-off voltages result in shorter turn-off times, reduced turn-off voltage spikes, and a lower likelihood of false turn-on.
Therefore the circuit wiring inductance to the IGBT can cause a high turn-off surge voltage (V=L(di/dt)). At an example, using the IGBT’s waveform at turn-off we will introduce the causes and methods of their suppression, as well as illustrate a concrete example of a circuit (using an IGBT and FWD together).
Control the surge voltage by adding a protection circuit (snubber circuit) to the IGBT. Use a film capacitor in the snubber circuit, place it as close as possible to the IGBT in order to bypass high frequency surge currents. Adjust the IGBT drive circuit’s – VGE or RG in order to reduce the di/dt value.
The driver OUT pin voltage is abruptly pulled from 16 V to 0 V and the IGBT gate is discharged through the gate resistor. The fast turn-off of the IGBT generates a voltage spike on Vce reaching 1 kV, which is dangerously close to the IGBT absolute maximum rating (1200 V). The calculated turn-off energy reaches 19 mJ.
The IGBT is driven by for turn-on and 22Ω for turn-off thanks to the use of two gate resistors and one diode: sink and source currents can therefore be tuned independently to help and solve EMI issues. Power switch drivers are used in very noisy environment and decoupling of the supplies should be cared.
Therefore, installing the active clamp circuits can suppress the spike voltage. Moreover, avalanche current generated by breakdown of Zenner diode, charge the gate capacitance so as to turn-on the IGBT. As the result, di/dt at turn-off become lower than that before adding the clamp circuit (Refer to Fig.5-6).
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